The Fundamentals of Fast Pulsed IV Measurement
Why This Webcast is Important:
Many different elements have converged to create a situation that requires parametric test to move beyond its traditional "DC" mode of device characterization (where test times could be tens or hundreds of milliseconds). Some of these factors include: lower operating voltages, expanded use of new and exotic materials, higher circuit operating temperatures, and the increasing impact of random telegraph signal noise (RTN) on SRAM cell stability. These issues often compel state-of-the-art semiconductor and related devices to be characterized using fast pulsed current-voltage (IV) measurements made within nanoseconds. Moreover, this also means that virtually all of the traditional measurement practices and techniques used in parametric test need to be modified in order to make valid high-speed pulsed measurements.
In this webcast Agilent Technologies will cover all of the basics of fast pulsed IV measurement including:
• An overview of pulsed measurement solution options
• The pros and cons of DC probes versus RF probes for on-wafer measurement
• Proper structure design practices to optimize on-wafer measurements
• General tips and tricks to improve high-speed measurement results
• Examples of high-speed IV measurement applications (NBTI/PBTI, RTS noise, etc.)
After viewing this web seminar, the attendees' ability to perform accurate and efficient high-speed pulsed IV measurements should be vastly improved.
Who should view this webcast:
Engineers, scientists and researchers involved in the characterization and modeling of semiconductor devices that require fast pulsed IV measurement would find this material extremely useful.
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