Power Panel: Gallium-Nitride vs. Silicon Carbide (GaN vs. SiC)
On-demand webcast:
Aired live: January 16, 2018 02:00 PM EST
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The panelists on this engineering roundtable discussion will present technical, performance and design considerations when selecting GaN or SiC instead of traditional silicon-based solutions for specific power conversion needs. Both device structures and optimized converter topologies (including drive circuitry requirements) will be reviewed. Design factors including input and output voltage levels, converter wattages, EMI/EMC concerns, thermal management, and other design considerations will be reviewed from the perspective of replacing conventional silicon devices with their SiC and GaN counterparts.
Sponsors:
Littelfuse, RECOM, TDK Corporation, Texas Instruments
Moderator:
Rich Nass, OpenSystems Media
Media Sponsors
Embedded Computing Design, PowerPulse.Net
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